We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano-disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion EA ¼ 1:3160:15 eV, a diffusivity prefactor of D0¼0.53(2:161) cm2 s1 that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad-atoms on III-V crystal surfaces and the fabrication of designable nanostructures.
Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets
Fedorov A;
2014
Abstract
We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano-disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion EA ¼ 1:3160:15 eV, a diffusivity prefactor of D0¼0.53(2:161) cm2 s1 that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad-atoms on III-V crystal surfaces and the fabrication of designable nanostructures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
