Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co ?-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Radiation hardness of silicon photomultipliers under 60Co ?-ray irradiation
Pagano R;Lombardo S;Libertino S
2014
Abstract
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co ?-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
