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Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co ?-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.

Radiation hardness of silicon photomultipliers under 60Co ?-ray irradiation

Pagano R;Lombardo S;Libertino S
2014

Abstract

Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co ?-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
2014
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
767
347
352
6
2-s2.0-84908043162
http://www.scopus.com/inward/record.url?eid=2-s2.0-84908043162&partnerID=q2rCbXpz
Sì, ma tipo non specificato
Gamma rays
Radiation damage
Radiation hardness
Silicon photomultiplier
7
info:eu-repo/semantics/article
262
Pagano, R; Lombardo, S; Palumbo, F; Sanfilippo, D; Valvo, G; Fallica, G; Libertino, S
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/277651
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