We present a unified Boltzmann transport theory for the drag resistivity ?D in two-component systems close to a second-order phase transition. We find general expressions for ?D in two and three spatial dimensions, for arbitrary population and mass imbalance, for particle- and holelike bands, and show how to incorporate, at the Gaussian level, the effect of fluctuations close to a phase transition. We find that the proximity to the phase transition enhances the drag resistivity upon approaching the critical temperature from above, and we qualitatively derive the temperature dependence of this enhancement for various cases. In addition, we present numerical results for two concrete experimental systems: (i) three-dimensional cold atomic Fermi gases close to a Stoner transition and (ii) two-dimensional spatially separated electron and hole systems in semiconductor double quantum wells. © 2013 American Physical Society.
Unified Boltzmann transport theory for the drag resistivity close to an interlayer-interaction-driven second-order phase transition
Polini M;
2013
Abstract
We present a unified Boltzmann transport theory for the drag resistivity ?D in two-component systems close to a second-order phase transition. We find general expressions for ?D in two and three spatial dimensions, for arbitrary population and mass imbalance, for particle- and holelike bands, and show how to incorporate, at the Gaussian level, the effect of fluctuations close to a phase transition. We find that the proximity to the phase transition enhances the drag resistivity upon approaching the critical temperature from above, and we qualitatively derive the temperature dependence of this enhancement for various cases. In addition, we present numerical results for two concrete experimental systems: (i) three-dimensional cold atomic Fermi gases close to a Stoner transition and (ii) two-dimensional spatially separated electron and hole systems in semiconductor double quantum wells. © 2013 American Physical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


