Optoelectronic properties of nanoporous Ge (np-Ge) have been investigated by Surface Photovoltage Spectroscopy. Electronic transitions in np-Ge have been compared with the ones obtained on crystalline and amorphous Ge, their dependence on ion implantation fluence and annealing treatment has been investigated. Np-Ge layers decorated with Au nanoparticles have been studied, and a significant photovoltage enhancement, probably related to light trapping effects, has been found. This result can be of major interest for future photovoltaic applications. © 2014 Elsevier Inc. All rights reserved.
Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy
Impellizzeri Giuliana;Romano Lucia;Grimaldi Maria Grazia
2014
Abstract
Optoelectronic properties of nanoporous Ge (np-Ge) have been investigated by Surface Photovoltage Spectroscopy. Electronic transitions in np-Ge have been compared with the ones obtained on crystalline and amorphous Ge, their dependence on ion implantation fluence and annealing treatment has been investigated. Np-Ge layers decorated with Au nanoparticles have been studied, and a significant photovoltage enhancement, probably related to light trapping effects, has been found. This result can be of major interest for future photovoltaic applications. © 2014 Elsevier Inc. All rights reserved.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
