We report on the demonstration of Terahertz (THz) broadband detectors based on field effect transistors exploiting tapered semiconductor nanowires. The intrinsic asymmetry provided by the nanowires geometry allows to achieve responsivity values as high as 55 V/W (2.5 mA/W) and a noise-equivalent-power of 3 x 10(-10) W/Hz(1/2) independent of the specific gate voltage applied. The possibility to reduce the number of terminals required to the source and drain contacts only and the technological feasibility of multi-pixel arrays are promising for the realization of compact and integrated THz matrix array detection systems. (C) 2014 AIP Publishing LLC.
Terahertz photodetectors based on tapered semiconductor nanowires
Ercolani D;Tredicucci A;Beltram F;Sorba L;MS Vitiello
2014
Abstract
We report on the demonstration of Terahertz (THz) broadband detectors based on field effect transistors exploiting tapered semiconductor nanowires. The intrinsic asymmetry provided by the nanowires geometry allows to achieve responsivity values as high as 55 V/W (2.5 mA/W) and a noise-equivalent-power of 3 x 10(-10) W/Hz(1/2) independent of the specific gate voltage applied. The possibility to reduce the number of terminals required to the source and drain contacts only and the technological feasibility of multi-pixel arrays are promising for the realization of compact and integrated THz matrix array detection systems. (C) 2014 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
