Recent experimental studies on graphene on hexagonal boron nitride (hBN) have demonstrated that hBN is not only a passive substrate that ensures superb electronic properties of graphene's carriers, but that it actively modifies their massless Dirac fermion character through a periodic moiré potential. Here we present a theory of the plasmon excitation spectrum of massless Dirac fermions in a moiré superlattice. We demonstrate that graphene-hBN stacks offer a rich platform for plasmonics in which control of plasmon modes can occur not only via electrostatic gating but also by adjusting, e.g., the relative crystallographic alignment.

Generation and morphing of plasmons in graphene superlattices

Tomadin A;Polini M
2014

Abstract

Recent experimental studies on graphene on hexagonal boron nitride (hBN) have demonstrated that hBN is not only a passive substrate that ensures superb electronic properties of graphene's carriers, but that it actively modifies their massless Dirac fermion character through a periodic moiré potential. Here we present a theory of the plasmon excitation spectrum of massless Dirac fermions in a moiré superlattice. We demonstrate that graphene-hBN stacks offer a rich platform for plasmonics in which control of plasmon modes can occur not only via electrostatic gating but also by adjusting, e.g., the relative crystallographic alignment.
2014
Istituto Nanoscienze - NANO
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/280082
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