A general model is proposed for a Vertical Cavity Surface Emitting Laser (VCSEL) with medium aspect ratio whose field profile can be described by a limited set of Gauss-Laguerre modes. The model is adapted to self-mixing schemes by supposing that the output beam is reinjected into the laser cavity by an external target mirror.We show that the self-mixing interferometric signal exhibits features peculiar of the spatial distribution of the emitted field and the target-reflected field and we suggest an applicative scheme that could be exploited for experimental displacement measurements. In particular, regimes of transverse mode-locking are found, where we propose an operational scheme for a sensor that can be used to simultaneously measure independent components of the target displacement like target translations along the optical axis (longitudinal axis) and target rotations in a plane orthogonal to the optical axis (transverse plane). © 2012 Optical Society of America.

Self-mixing in multi-transverse mode semiconductor lasers: Model and potential application to multi-parametric sensing

Columbo Lorenzo L;Brambilla M;Dabbicco Maurizio;Scamarcio Gaetano
2012

Abstract

A general model is proposed for a Vertical Cavity Surface Emitting Laser (VCSEL) with medium aspect ratio whose field profile can be described by a limited set of Gauss-Laguerre modes. The model is adapted to self-mixing schemes by supposing that the output beam is reinjected into the laser cavity by an external target mirror.We show that the self-mixing interferometric signal exhibits features peculiar of the spatial distribution of the emitted field and the target-reflected field and we suggest an applicative scheme that could be exploited for experimental displacement measurements. In particular, regimes of transverse mode-locking are found, where we propose an operational scheme for a sensor that can be used to simultaneously measure independent components of the target displacement like target translations along the optical axis (longitudinal axis) and target rotations in a plane orthogonal to the optical axis (transverse plane). © 2012 Optical Society of America.
2012
Istituto di fotonica e nanotecnologie - IFN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/280456
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