A new strip-loaded structure for ion-exchanged waveguide amplifiers in Er3+-doped glass is suggested The fabrication of these waveguides lacks steps such as mask deposition and burial process that can be critical for some glasses. A simple numerical modeling shows that similar, or even higher, gain values as in ion-exchanged buried waveguides can be achieved. Preliminary experimental data for the fabrication of the strip-loaded structure are also reported.

Strip-loaded structure for ion-exchanged Er3+-doped glass waveguide amplifiers

Nunzi Conti G;
1999

Abstract

A new strip-loaded structure for ion-exchanged waveguide amplifiers in Er3+-doped glass is suggested The fabrication of these waveguides lacks steps such as mask deposition and burial process that can be critical for some glasses. A simple numerical modeling shows that similar, or even higher, gain values as in ion-exchanged buried waveguides can be achieved. Preliminary experimental data for the fabrication of the strip-loaded structure are also reported.
1999
0-8194-3092-7
erbium
ion-exchange
phosphate glass
strip-loaded waveguide
waveguide amplifier
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/280551
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