We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm(2), which is highest ever reported value from any silicon light emitter.

Room Temperature Electrically Pumped Silicon Nano-light Source at Telecommunication Wavelengths

2013

Abstract

We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm(2), which is highest ever reported value from any silicon light emitter.
2013
Istituto per la Microelettronica e Microsistemi - IMM
978-0-8194-9398-9
silicon photonics
silicon light emission
photonic crystal cavity
optically active defects
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/283321
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