We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm(2), which is highest ever reported value from any silicon light emitter.

Room Temperature Electrically Pumped Silicon Nano-light Source at Telecommunication Wavelengths

2013

Abstract

We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm(2), which is highest ever reported value from any silicon light emitter.
2013
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
SILICON PHOTONICS VIII
UNSP 862918
978-0-8194-9398-9
Sì, ma tipo non specificato
FEB 04-06, 2013
San Francisco, CA
silicon photonics
silicon light emission
photonic crystal cavity
optically active defects
3
none
Shakoor, A Shakoor, Abdul ; Lo Savio, R Lo Savio, Roberto; Cardile, P Cardile, Paolo; Portalupi, SL Portalupi, Simone. L.; Gerace, D Gerace, Dario; ...espandi
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/283321
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