We study the formation of self organized light peaks, in GaAs microcavities, (called Cavity Solitons, abbr. CS). By means of analytical and numerical techniques, experimentally accessible parametric domains can be found, where stable and robust CS can be addressed, shifted and brought to interaction ranges, thus realizing some basic schemes for optical information treatment. A Fourier-Newton approach is applied to gain quantitative information on CS's dynamical response to external control fields or on CS pair interaction.

Controlling cavity solitons in semiconductor microcavities for optical information treatment

Spinelli Lorenzo;
2001

Abstract

We study the formation of self organized light peaks, in GaAs microcavities, (called Cavity Solitons, abbr. CS). By means of analytical and numerical techniques, experimentally accessible parametric domains can be found, where stable and robust CS can be addressed, shifted and brought to interaction ranges, thus realizing some basic schemes for optical information treatment. A Fourier-Newton approach is applied to gain quantitative information on CS's dynamical response to external control fields or on CS pair interaction.
2001
Inglese
Physics and Simulation of Optoelectronic Devices IX
4283
551
562
4
0-8194-3961-4
http://www.scopus.com/record/display.url?eid=2-s2.0-0034774643&origin=inward
Sì, ma tipo non specificato
22 - 26 January 2001
San Jose, CA; United States
Cavity solitons
Optical information treatment
Pattern formation
Semiconductor microcavities
5
none
Brambilla, M; Maggipinto, Tommaso; Perrini Ida, Maria; Spinelli, LORENZO CLEMENTE; Tissoni, Giovanna
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/286357
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