Starting from stratification of alternating thin films of Si and ZnO produced by sputtering technique, followed by an annealing process at a sufficiently low temperature (560 degrees C) under vacuum (10(-4) mbar), we were able to form crystalline nano-aggregates of Si and ZnO in a dielectric matrix of zinc silicate and silicon oxide. The grain size of the Si crystallites depended on the Si/ZnO ratio in the starting material and on the annealing duration. Materials with tuned band gaps have been produced. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
A new route for fabrication of silicon QDs in a dielectric matrix of silica and silicate
Nicotra Giuseppe
2012
Abstract
Starting from stratification of alternating thin films of Si and ZnO produced by sputtering technique, followed by an annealing process at a sufficiently low temperature (560 degrees C) under vacuum (10(-4) mbar), we were able to form crystalline nano-aggregates of Si and ZnO in a dielectric matrix of zinc silicate and silicon oxide. The grain size of the Si crystallites depended on the Si/ZnO ratio in the starting material and on the annealing duration. Materials with tuned band gaps have been produced. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimFile in questo prodotto:
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