A new, unique spin-on metal-organic resist presenting a combination of worthwhile properties is described by Giovanna Brusatin and co-workers on page 6261. The resist shows good processability, typical of polymeric resists, direct patternability with various forms of radiation, mild post-exposure treatment requirements, positive or negative tone development, and a selectivity greater than 100:1 with respect to the underlying silicon in a fluorine-based continuous plasma-etching process. The use of such materials for high-resolution deep silicon etching is time- and cost-effective compared with the pattern-transfer materials that are generally used.
Semiconductor Processing: Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching (Adv. Mater. 43/2013).
Grenci Gianluca;Pozzato Alessandro;Tormen Massimo;
2013
Abstract
A new, unique spin-on metal-organic resist presenting a combination of worthwhile properties is described by Giovanna Brusatin and co-workers on page 6261. The resist shows good processability, typical of polymeric resists, direct patternability with various forms of radiation, mild post-exposure treatment requirements, positive or negative tone development, and a selectivity greater than 100:1 with respect to the underlying silicon in a fluorine-based continuous plasma-etching process. The use of such materials for high-resolution deep silicon etching is time- and cost-effective compared with the pattern-transfer materials that are generally used.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
