We investigate the effects of ambient pressure and substrate temperature on the deposition rate of oxides grown by pulsed laser deposition in oxygen atmosphere. The deposition rate of LaGaO(3) (LGO) and LaAlO(3) (LAO) is studied at room temperature by means of a quartz crystal microbalance and at 800 degrees C by exploiting reflection high energy electron diffraction. We observe a clear dependence of the deposition rate on temperature for an oxygen pressure between 10(-2) and 1 mbar. A simple model based on multiple-elastic-scattering processes thoroughly describes the observed dependence of the deposition rate on the pressure/density of the background gas. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565157]
Substrate heating influence on the deposition rate of oxides during pulsed laser deposition in ambient gas
Aruta C;Wang X;
2011
Abstract
We investigate the effects of ambient pressure and substrate temperature on the deposition rate of oxides grown by pulsed laser deposition in oxygen atmosphere. The deposition rate of LaGaO(3) (LGO) and LaAlO(3) (LAO) is studied at room temperature by means of a quartz crystal microbalance and at 800 degrees C by exploiting reflection high energy electron diffraction. We observe a clear dependence of the deposition rate on temperature for an oxygen pressure between 10(-2) and 1 mbar. A simple model based on multiple-elastic-scattering processes thoroughly describes the observed dependence of the deposition rate on the pressure/density of the background gas. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565157]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
