Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO(3)/Si structure is described briefly.
Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics
Spiga S;
2010
Abstract
Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO(3)/Si structure is described briefly.File in questo prodotto:
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