In the last years, zirconium titanate thin films ZrxTi1xO4 (ZT) turned out to have very interesting dielectric properties, which suggests a use in microwave integrated systems. In this work, the synthesis and characterization of ZrxTi1xO4 (ZT) thin films grown via MOCVD are described, giving emphasis to the study of their structural, chemical and physical properties, with relation to the different process parameters applied. All samples analysed by XRD, AFM, SEM and EDS, show a great dependence on substrate temperature and reactor pressure on the kinetic of growth as well as on the chemical, crystallographic, morphological and microstructural features
Influence of growth parameters on properties of electroceramic thin films growth by MO-CVD
2001
Abstract
In the last years, zirconium titanate thin films ZrxTi1xO4 (ZT) turned out to have very interesting dielectric properties, which suggests a use in microwave integrated systems. In this work, the synthesis and characterization of ZrxTi1xO4 (ZT) thin films grown via MOCVD are described, giving emphasis to the study of their structural, chemical and physical properties, with relation to the different process parameters applied. All samples analysed by XRD, AFM, SEM and EDS, show a great dependence on substrate temperature and reactor pressure on the kinetic of growth as well as on the chemical, crystallographic, morphological and microstructural featuresI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
