The growing diffusion of personal computers and satellite communications systems and the pressing demand for the miniaturization of more performing integrated circuits turned out into the intensive research activity focused on the synthesis and on the study of new materials for the realization of next generation micro-devices. Zirconium titanate based thin films have been used in a wide range of applications and, in the latest years, they appeared very promising as dielectrics for the integration in MIM (metal-insulator-metal) and MIS (metal-insulator-semiconductor) structures. However, the dielectric properties of these materials still depend on their structural and chemical characteristics and require the development of a suitable synthesis methodology. In this work we report the deposition behaviour of highly oriented ZrTiO4 thin films prepared on p-type (100) Si substrates by the metaloragnic chemical vapour deposition process. The chemical composition and the film thickness were controlled by simply adjusting the carrier gas flow rates and the deposition temperatures. We have investigated the influence of substrate temperature and the reactor pressure on the growth kinetic, on the crystallographic structure and on the microstructural and chemical properties. The substrate temperature plays an important role on deposition rate, on the orientation of the crystallographic phases and on the formation of a columnar structure. The modulation of the reactor pressure influences the deposition rate, the surfaces roughness and is important to obtain thin films characterized by an high dense, crack- and void-free columnar structure.
Deposition behaviour of Zirconium Titanate thin films by metalorganic chemical vapour deposition: influence of substrate temperature and reactor pressure on structural and chemical properties of ZrTiO4 thin films
2002
Abstract
The growing diffusion of personal computers and satellite communications systems and the pressing demand for the miniaturization of more performing integrated circuits turned out into the intensive research activity focused on the synthesis and on the study of new materials for the realization of next generation micro-devices. Zirconium titanate based thin films have been used in a wide range of applications and, in the latest years, they appeared very promising as dielectrics for the integration in MIM (metal-insulator-metal) and MIS (metal-insulator-semiconductor) structures. However, the dielectric properties of these materials still depend on their structural and chemical characteristics and require the development of a suitable synthesis methodology. In this work we report the deposition behaviour of highly oriented ZrTiO4 thin films prepared on p-type (100) Si substrates by the metaloragnic chemical vapour deposition process. The chemical composition and the film thickness were controlled by simply adjusting the carrier gas flow rates and the deposition temperatures. We have investigated the influence of substrate temperature and the reactor pressure on the growth kinetic, on the crystallographic structure and on the microstructural and chemical properties. The substrate temperature plays an important role on deposition rate, on the orientation of the crystallographic phases and on the formation of a columnar structure. The modulation of the reactor pressure influences the deposition rate, the surfaces roughness and is important to obtain thin films characterized by an high dense, crack- and void-free columnar structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
