The thermal oxidation of the beta-Si3N4(0 0 0 1)-8 × 8 surface has been carried out. The spectroscopic characterization has been performed by high resolution core-level and by angle-resolved photoemissionspectroscopy. Our findings demonstrate that the surface shows a low but clear reactivity with oxygen. The known resonance ascribed to the 8 × 8 reconstruction results strongly affected by the oxygen dosing, demonstrating the involvement of the topmost nitride atoms.

Oxidation of the 8 × 8-reconstructed Beta -Si3N4(0 0 0 1) surface: A photoemission study

Flammini R;Bellucci A;Trucchi DM;Colonna S;Ronci F;
2015

Abstract

The thermal oxidation of the beta-Si3N4(0 0 0 1)-8 × 8 surface has been carried out. The spectroscopic characterization has been performed by high resolution core-level and by angle-resolved photoemissionspectroscopy. Our findings demonstrate that the surface shows a low but clear reactivity with oxygen. The known resonance ascribed to the 8 × 8 reconstruction results strongly affected by the oxygen dosing, demonstrating the involvement of the topmost nitride atoms.
2015
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Silicon nitride; ARPES; Oxidation; Nitridation; Resonance
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/293673
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