Zinc oxide is one of the first studied oxide semiconductors; it is now living a second youth thank to the interest in the oxide electronic, for is wide-band gap optoelectronic properties and for realizing dilute magnetic semiconductors for application in spintronics. The integration of ZnO high mobility transparent semiconductor with perovskite that exhibit a wide spectrum of physical properties (superconductivity, ferroelectricity, ferromagnetism, etc.) may lead to a wide variety of new electronic/optoelectronic devices In this work we report about the realization of ZnO/SrTiO3 , ZnO:Al/SrTiO3, ZnO:Co/SrTiO3 and ZnO:Co/(La,Sr)MnO3/SrTiO3 epitaxial heterostuctures and about their application for the fabrication transparent electronic devices. High crystalline quality ZnO pure or Al or Co doped layers were grown by pulsed laser deposition on 110 crystal face of the perovskite oxides. And their structural and morphological properties were studied by XRD reciprocal space mapping and AFM respectively. By in situ shadow masking and conventional photolithographic techniques we realized devices both in stacked geometry and in planar configuration.
ZnO thin films deposited on SrTiO3 for transparent electronic devices
I Pallecchi;G Canu;
2006
Abstract
Zinc oxide is one of the first studied oxide semiconductors; it is now living a second youth thank to the interest in the oxide electronic, for is wide-band gap optoelectronic properties and for realizing dilute magnetic semiconductors for application in spintronics. The integration of ZnO high mobility transparent semiconductor with perovskite that exhibit a wide spectrum of physical properties (superconductivity, ferroelectricity, ferromagnetism, etc.) may lead to a wide variety of new electronic/optoelectronic devices In this work we report about the realization of ZnO/SrTiO3 , ZnO:Al/SrTiO3, ZnO:Co/SrTiO3 and ZnO:Co/(La,Sr)MnO3/SrTiO3 epitaxial heterostuctures and about their application for the fabrication transparent electronic devices. High crystalline quality ZnO pure or Al or Co doped layers were grown by pulsed laser deposition on 110 crystal face of the perovskite oxides. And their structural and morphological properties were studied by XRD reciprocal space mapping and AFM respectively. By in situ shadow masking and conventional photolithographic techniques we realized devices both in stacked geometry and in planar configuration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.