We have demonstrated a power amplifier for a single-frequency signal at 1083 nm as required in spectroscopic applications. It is based on a ytterbium doped silica fibre which was pumped by a MOPA semiconductor laser at 978 nm. In a preliminary experiment we achieved 14 dB gain and 60 mW of amplified signal. We discuss the design considerations, the possibility of significant improvements of output power and gain, and the relevance of the amplifier for high resolution spectroscopy.
Power amplifier for 1083 nm using ytterbium doped fibre
DeNatale P;
1997
Abstract
We have demonstrated a power amplifier for a single-frequency signal at 1083 nm as required in spectroscopic applications. It is based on a ytterbium doped silica fibre which was pumped by a MOPA semiconductor laser at 978 nm. In a preliminary experiment we achieved 14 dB gain and 60 mW of amplified signal. We discuss the design considerations, the possibility of significant improvements of output power and gain, and the relevance of the amplifier for high resolution spectroscopy.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.