We show that the main causes of V(T) variations are the drain induced barrier lowering (DIBL) and floating body effects (FBEs), induced by impact ionization. The relative influence of FBEs and DIBL is analysed by performing numerical simulations with or without including the impact ionization model.
Threshold voltage variations induced by drain bias in short channel polycrystalline silicon thin film transistors
Valletta A;Mariucci L;Cuscuna M;Maiolo L;Simeone D;
2009
Abstract
We show that the main causes of V(T) variations are the drain induced barrier lowering (DIBL) and floating body effects (FBEs), induced by impact ionization. The relative influence of FBEs and DIBL is analysed by performing numerical simulations with or without including the impact ionization model.File in questo prodotto:
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