This paper presents the technological process and electrical behaviour of Silicon Nano-Crystal (Si-NC) FinFlash memories fabricated on Silicon On Insulator (SOI) substrates. We study ultra-scaled memory devices (with channel length, LG, and fin width, WFIN, down to few decananometers), with Si-NC storage nodes fabricated either by LPCVD or by annealing of Silicon-Rich-Oxide, under different electrical configurations (NAND and NOR schemes).
Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics
Lombardo S;Bongiorno C;
2007
Abstract
This paper presents the technological process and electrical behaviour of Silicon Nano-Crystal (Si-NC) FinFlash memories fabricated on Silicon On Insulator (SOI) substrates. We study ultra-scaled memory devices (with channel length, LG, and fin width, WFIN, down to few decananometers), with Si-NC storage nodes fabricated either by LPCVD or by annealing of Silicon-Rich-Oxide, under different electrical configurations (NAND and NOR schemes).File in questo prodotto:
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