In this paper, we report the development of novel Pt/nanostructured RuO2/SiC Schottky diode based sensors for hydrogen gas applications. The nanostructured ruthenium oxide thin films were deposited on SiC substrates using radio frequency sputtering technique. Scanning electron microscopy revealed the sputtered RuO2 layer consists of nano-cubular structures with dimensions ranging between 10 and 50 nm. X-ray diffraction confirmed the presence of tetragonal ruthenium (IV) oxide, with preferred orientation along the (101) lattice plane. The current voltage characteristics of the sensors were investigated towards hydrogen gas in synthetic air at different temperatures from 25 degrees C to 240 degrees C. The dynamic responses of the sensors were studied at an optimum temperature of 240 degrees C and a voltage shift of 304 mV was recorded toward 1% hydrogen gas.
Pt/Nanostructured RuO2/SiC Schottky Diode Based Hydrogen Gas Sensors
Comini E;Ferroni M;Sberveglieri G;
2011
Abstract
In this paper, we report the development of novel Pt/nanostructured RuO2/SiC Schottky diode based sensors for hydrogen gas applications. The nanostructured ruthenium oxide thin films were deposited on SiC substrates using radio frequency sputtering technique. Scanning electron microscopy revealed the sputtered RuO2 layer consists of nano-cubular structures with dimensions ranging between 10 and 50 nm. X-ray diffraction confirmed the presence of tetragonal ruthenium (IV) oxide, with preferred orientation along the (101) lattice plane. The current voltage characteristics of the sensors were investigated towards hydrogen gas in synthetic air at different temperatures from 25 degrees C to 240 degrees C. The dynamic responses of the sensors were studied at an optimum temperature of 240 degrees C and a voltage shift of 304 mV was recorded toward 1% hydrogen gas.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
