In the last years, zirconium titanate thin films ZrxTi(1-x)O4 (ZT) turned out to have very interesting dielectric properties, which suggest a use in microvawe integrated systems. In this work, the synthesis and characterization of ZT thin films grown by MO-CVD are described, giving emphasis to the study of their structural, chemical and physical properties, with relation to the different process parameters applied. All samples analysed by XRD, AFM, SEM and EDS, show a great dependence on substrate temperature and reactor pressure on the kinetic of growth as well as on the chemical, crystallographic, morphological and microstructural features.
Influence of growth parameters on properties of electroceramic thin films grown via MO-CVD
Padeletti G;Ingo GM;Viticoli S
2002
Abstract
In the last years, zirconium titanate thin films ZrxTi(1-x)O4 (ZT) turned out to have very interesting dielectric properties, which suggest a use in microvawe integrated systems. In this work, the synthesis and characterization of ZT thin films grown by MO-CVD are described, giving emphasis to the study of their structural, chemical and physical properties, with relation to the different process parameters applied. All samples analysed by XRD, AFM, SEM and EDS, show a great dependence on substrate temperature and reactor pressure on the kinetic of growth as well as on the chemical, crystallographic, morphological and microstructural features.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
