Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 oC for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced.
Electrophoretic deposition of bilayer based on sacrificial titanium dioxide and lead zirconate titanate on bare silicon wafer
Pietro Galizia;Carmen Galassi
2015
Abstract
Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 oC for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
