Field-effect transistors are emerging as useful device structures for efficient light generation from a variety of materials, including inorganic semiconductors, carbon nanotubes and organic thin films. In particular, organic light-emitting field-effect transistors are a new class of electro-optical devices that could provide a novel architecture to address open questions concerning charge-carrier recombination and light emission in organic materials. These devices have potential applications in optical communication systems, advanced display technology, solid-state lighting and electrically pumped organic lasers. Here, recent advances and future prospects of light-emitting field-effect transistorsare explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.

A bright future for organic field-effect transistors

Muccini M
2006

Abstract

Field-effect transistors are emerging as useful device structures for efficient light generation from a variety of materials, including inorganic semiconductors, carbon nanotubes and organic thin films. In particular, organic light-emitting field-effect transistors are a new class of electro-optical devices that could provide a novel architecture to address open questions concerning charge-carrier recombination and light emission in organic materials. These devices have potential applications in optical communication systems, advanced display technology, solid-state lighting and electrically pumped organic lasers. Here, recent advances and future prospects of light-emitting field-effect transistorsare explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.
2006
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/29833
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