1D semiconductor nanostructures, owing to their low dimensionality, exhibit novel properties, that find application in many device fields, such as electronic, optoelectronic, photonic, energy, mechanical systems, to mention only a few. In addition, they can present crystal structures different from their common ones, due to the size effect or to their growth mechanism. Transmission Electron Microscopy, that holds the capability of imaging individual atoms while obtaining, with the most advanced instruments, structural and chemical information with atomic resolution, runs for a leading methodology for the characterization of nanoscale materials and devices. In this work, it is presented how the TEM techniques, combined with proper simulations, allow to identify and assess the crystal structure of uncommon/unforeseen polymorphs in phase change GeSbTe and in Si nanowires.
ADVANCED MICROSCOPY TECHNIQUES APPLIED TO SEMICONDUCTING NANOWIRES
2015
Abstract
1D semiconductor nanostructures, owing to their low dimensionality, exhibit novel properties, that find application in many device fields, such as electronic, optoelectronic, photonic, energy, mechanical systems, to mention only a few. In addition, they can present crystal structures different from their common ones, due to the size effect or to their growth mechanism. Transmission Electron Microscopy, that holds the capability of imaging individual atoms while obtaining, with the most advanced instruments, structural and chemical information with atomic resolution, runs for a leading methodology for the characterization of nanoscale materials and devices. In this work, it is presented how the TEM techniques, combined with proper simulations, allow to identify and assess the crystal structure of uncommon/unforeseen polymorphs in phase change GeSbTe and in Si nanowires.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
