The modern interest for phenomena at the semiconductor-electrolyte interface dates back to experiments performed in the 1950s with germanium, and has extended to most semiconducting materials for reasons of fundamental knowledge or potential application, going from semiconductor processing technology to heterogeneous photocatalysis to sensors. The subject is highly interdisciplinary and involves fields like electrochemistry, solid-state physics, and surface science. The aim of this article is to provide a concise survey of the basic concepts involved in the formation and operation of a semiconductor-electrolyte junction, both in the dark and under illumination. In most cases, terminologies and symbols recommended by IUPAC are used. Some important equations are reported but not derived.
Semiconductor Electrodes
Cattarin S;
2009
Abstract
The modern interest for phenomena at the semiconductor-electrolyte interface dates back to experiments performed in the 1950s with germanium, and has extended to most semiconducting materials for reasons of fundamental knowledge or potential application, going from semiconductor processing technology to heterogeneous photocatalysis to sensors. The subject is highly interdisciplinary and involves fields like electrochemistry, solid-state physics, and surface science. The aim of this article is to provide a concise survey of the basic concepts involved in the formation and operation of a semiconductor-electrolyte junction, both in the dark and under illumination. In most cases, terminologies and symbols recommended by IUPAC are used. Some important equations are reported but not derived.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
