We performed pulsed measurements on organic transistors presenting four different active materials. All the devices show a strong correlation between drain-source current and the pulse width. We attributed this phenomenon to the long time needed for channel formation and depletion. These transient effects may have a severe impact on device characterization and application development.
On the Pulsed and Transient characterization of Organic Field-Effect Transistors
Toffanin S;Quiroga SD;Benvenuti E;Natali M;Muccini M;
2015
Abstract
We performed pulsed measurements on organic transistors presenting four different active materials. All the devices show a strong correlation between drain-source current and the pulse width. We attributed this phenomenon to the long time needed for channel formation and depletion. These transient effects may have a severe impact on device characterization and application development.File in questo prodotto:
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