We report here on a low temperature scanning tunneling microscopy study of the hydroxylation of oxygen precovered Ag(110) at a crystal temperature of 250 K. For water doses comparable with the oxygen coverage, we observe complete removal of the O-Ag added rows and the formation of an OH-induced superstructure in the perpendicular (< 1 (1) over bar0 >) direction, in accord with previous results. OH sits in the channels of the unreconstructed surface, in agreement with the adsorption at threefold hollow sites proposed by K. Bange [Surf. Sci. 183, 334 (1987)]. The OH layer disorders upon localized voltage pulses. The damage extends along the < 1 (1) over bar0 > direction, suggesting a strong interaction among neighboring OH groups.

STM study of hydroxyl formation at O/Ag(110)

Savio L;Smerieri M;Vattuone L;Gussoni A;Tassistro C;
2006

Abstract

We report here on a low temperature scanning tunneling microscopy study of the hydroxylation of oxygen precovered Ag(110) at a crystal temperature of 250 K. For water doses comparable with the oxygen coverage, we observe complete removal of the O-Ag added rows and the formation of an OH-induced superstructure in the perpendicular (< 1 (1) over bar0 >) direction, in accord with previous results. OH sits in the channels of the unreconstructed surface, in agreement with the adsorption at threefold hollow sites proposed by K. Bange [Surf. Sci. 183, 334 (1987)]. The OH layer disorders upon localized voltage pulses. The damage extends along the < 1 (1) over bar0 > direction, suggesting a strong interaction among neighboring OH groups.
2006
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
STM
hydroxylation
Oxygen
Ag(110)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/304958
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