We have applied the break-junction technique to highly biepitaxial c-axis oriented YBa2Cu3O7 thin films with T-C (rho=0) = 91 K. Mechanically adjustable junctions with a good stability and tunneling current favored along the ab-planes have been realized. The conductance characteristics of these junctions show the presence of gap related maxima that move towards zero bias for increasing temperatures. Considering the misorientation angle alpha approximate to 45degrees +/- 5degrees of the junction, a maximum gap value at the Fermi level Delta(0) approximate to 22 meV is inferred at T = 13 K. The temperature dependence of the gap related structures, shows a quasilinear behavior for T > 0.4 T-C similar to that observed in c-axis oriented, S-I-N type YBa2Cu3O7 planar junctions.
Temperature dependence of the YBa2Cu3O7 energy gap in differently oriented tunnel junctions
Giubileo F;
2001
Abstract
We have applied the break-junction technique to highly biepitaxial c-axis oriented YBa2Cu3O7 thin films with T-C (rho=0) = 91 K. Mechanically adjustable junctions with a good stability and tunneling current favored along the ab-planes have been realized. The conductance characteristics of these junctions show the presence of gap related maxima that move towards zero bias for increasing temperatures. Considering the misorientation angle alpha approximate to 45degrees +/- 5degrees of the junction, a maximum gap value at the Fermi level Delta(0) approximate to 22 meV is inferred at T = 13 K. The temperature dependence of the gap related structures, shows a quasilinear behavior for T > 0.4 T-C similar to that observed in c-axis oriented, S-I-N type YBa2Cu3O7 planar junctions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
