A new class of electro-optical devices called field-effect light-emitting transistor (OLET) is emerging as a technological platform capable to combine in the same architecture the current modulating function of a transistor and the light generation. The external quantum efficiency of conventional devices remains at around 20% especially to poor light out-coupling efficiency which in turn leads to low values of brightness limiting the possible application of the device. Here, we present a new strategy to enhance extraction efficiency in OLET by implementing all-organic multilayer photonic crystals as gate dielectric. In this way it is possible to obtain electroluminescence enhancement according to the resonant cavity-enhanced light extraction.
Toward All-Organic Photonic Crystal Gate Dielectric for High Extraction Efficiency in OLET
M Natali;S Cavallini;F Scotognella;R Capelli;M Muccini
2012
Abstract
A new class of electro-optical devices called field-effect light-emitting transistor (OLET) is emerging as a technological platform capable to combine in the same architecture the current modulating function of a transistor and the light generation. The external quantum efficiency of conventional devices remains at around 20% especially to poor light out-coupling efficiency which in turn leads to low values of brightness limiting the possible application of the device. Here, we present a new strategy to enhance extraction efficiency in OLET by implementing all-organic multilayer photonic crystals as gate dielectric. In this way it is possible to obtain electroluminescence enhancement according to the resonant cavity-enhanced light extraction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
