AlN films, 1.4–6.2 ?m thick, were sputtered on z-cut Al2O3 substrates and four electroacoustic coupling configurations were realized and characterized for x and y surface acoustic wave (SAW) propagation directions. The temperature-coefficient of delay dispersion curves of the four configurations was experimentally evaluated and eight temperature-compensated points were estimated. The velocity anisotropy of the multilayers was investigated for different AlN film thicknesses, electric excitation conditions, and temperature values. The design trade-offs required for temperature-compensated, 50 ? matched, gigahertz-range, enhanced-coupling, low loss SAW devices are provided for the four dispersive coupling configurations.

Analysis of dispersive electroacoustic coupling configurations for application to gigahertz-band, temperature-compensated AlN-based acoustic devices

Caliendo C
2008

Abstract

AlN films, 1.4–6.2 ?m thick, were sputtered on z-cut Al2O3 substrates and four electroacoustic coupling configurations were realized and characterized for x and y surface acoustic wave (SAW) propagation directions. The temperature-coefficient of delay dispersion curves of the four configurations was experimentally evaluated and eight temperature-compensated points were estimated. The velocity anisotropy of the multilayers was investigated for different AlN film thicknesses, electric excitation conditions, and temperature values. The design trade-offs required for temperature-compensated, 50 ? matched, gigahertz-range, enhanced-coupling, low loss SAW devices are provided for the four dispersive coupling configurations.
2008
Istituto dei Sistemi Complessi - ISC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/30840
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