To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (?40 mW/cm2) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

Erratum: Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers (Applied Physics Letters (2014) 104 (041112))

Mezzapesa FP;Columbo LL;Brambilla M;Dabbicco M;Vitiello MS;Scamarcio G
2015

Abstract

To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (?40 mW/cm2) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.
2015
Istituto di fotonica e nanotecnologie - IFN
Istituto Nanoscienze - NANO
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/309311
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