We study the spatiotemporal pattern of the near-field intensity correlations generated by parametric scattering processes in a planar optical cavity. A generalized Bogolubov–de Gennes model is used to compute the second-order field correlation function. Analytic approximations are developed to understand the numerical results in the different regimes. The correlation pattern is found to be robust against a realistic disorder for state-of-the-art semiconductor systems.

Near-field intensity correlations in parametric photo-luminescence

Carusotto I
2010

Abstract

We study the spatiotemporal pattern of the near-field intensity correlations generated by parametric scattering processes in a planar optical cavity. A generalized Bogolubov–de Gennes model is used to compute the second-order field correlation function. Analytic approximations are developed to understand the numerical results in the different regimes. The correlation pattern is found to be robust against a realistic disorder for state-of-the-art semiconductor systems.
2010
Istituto Nazionale di Ottica - INO
luminescence
semiconductor microcavity
correlations
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/30964
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