This contribution presents an application of scanning near- field microscopy to the characterization of semi-conductors. We have studied the planar homogeneity of a Au/GaAs Schottky barrier using a local illumination by a nanosource with various wavelengths. One of the main results is the interface defaults revealed by the photocurrent mapping at ? = 1.33?m. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Near field imaging of the photocurrent on Au/GaAs interface with various wavelengths
Cricenti A;Barchesi C;
1997
Abstract
This contribution presents an application of scanning near- field microscopy to the characterization of semi-conductors. We have studied the planar homogeneity of a Au/GaAs Schottky barrier using a local illumination by a nanosource with various wavelengths. One of the main results is the interface defaults revealed by the photocurrent mapping at ? = 1.33?m. © 2010 Copyright SPIE - The International Society for Optical Engineering.File in questo prodotto:
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