Thick films of Nb-doped lead zirconate titanate (PZT) on bare silicon (Si) wafers were prepared by electrophoretic deposition (EPD) in ethanol-based suspensions. Alloyed Al/Si ohmic contacts were used for electrical connections. EPD on bare Si wafers was obtained with similar results to metallic substrates, at nominal electric fields between 4350 and 10900 V m-1. Well-adhered and crack-free green films were obtained after solvent evaporation. Sintering of green PZT films was performed at either 850 oC or 950 oC for 1 h. Sintered PZT films on Si featured sharp Si/PZT interfaces and a good degree of crystallinity. Possible applications of sintered PZT/Si structures as on-chip sensors are discussed, taking into account relevant literature results.
Sharp silicon/lead zirconate titanate interfaces by electrophoretic deposition on bare silicon wafers and post-deposition sintering
Baldisserri C;Gardini D;Galassi C
2012
Abstract
Thick films of Nb-doped lead zirconate titanate (PZT) on bare silicon (Si) wafers were prepared by electrophoretic deposition (EPD) in ethanol-based suspensions. Alloyed Al/Si ohmic contacts were used for electrical connections. EPD on bare Si wafers was obtained with similar results to metallic substrates, at nominal electric fields between 4350 and 10900 V m-1. Well-adhered and crack-free green films were obtained after solvent evaporation. Sintering of green PZT films was performed at either 850 oC or 950 oC for 1 h. Sintered PZT films on Si featured sharp Si/PZT interfaces and a good degree of crystallinity. Possible applications of sintered PZT/Si structures as on-chip sensors are discussed, taking into account relevant literature results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
