First experiments at the Vanderbilt free electron lasers measured the local reflectivity of a PtSi/Si system. The reflectivity in the scanning near-field optical microscope images revealed features that were not present in the corresponding shear-force (topology) images and which were due to localized changes in the bulk properties of the sample. The size of the smallest detected features clearly demonstrated that near-field conditions were reached. The use of different photon wavelengths (0.653, 1.2, and 2.4 ?m) enabled us to probe regions of different depth. © 1998 American Institute of Physics.

Free-electron-laser near-field nanospectroscopy

Cricenti A;
1998

Abstract

First experiments at the Vanderbilt free electron lasers measured the local reflectivity of a PtSi/Si system. The reflectivity in the scanning near-field optical microscope images revealed features that were not present in the corresponding shear-force (topology) images and which were due to localized changes in the bulk properties of the sample. The size of the smallest detected features clearly demonstrated that near-field conditions were reached. The use of different photon wavelengths (0.653, 1.2, and 2.4 ?m) enabled us to probe regions of different depth. © 1998 American Institute of Physics.
1998
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/310863
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