Recent developments in the fi eld of thin-fi lm growth technologies have allowed control at an atomic level of deposited layers, thus opening new perspectives in the fi eld of engineering of multilayers and heterostructures based on complex oxides. In particular, it is expected that oxide heterostructures, with almost ideal interfaces, may lead to interesting artificial materials with novel properties.
Enhancement of Ionic Conductivity in Sm-Doped Ceria/Yttria-Stabilized Zirconia Heteroepitaxial Structures
Tebano A;Balestrino G
2010
Abstract
Recent developments in the fi eld of thin-fi lm growth technologies have allowed control at an atomic level of deposited layers, thus opening new perspectives in the fi eld of engineering of multilayers and heterostructures based on complex oxides. In particular, it is expected that oxide heterostructures, with almost ideal interfaces, may lead to interesting artificial materials with novel properties.File in questo prodotto:
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