In this paper, we describe the state of the art in the numerical simulation of the carrier transport properties of GaN and its ternary alloys. We outline the characteristics of our state of the art full-band Monte Carlo model that includes a fitting parameter free approach to compute the carrier-phonon interaction and a full quantum mechanical model for multiband transport which is critical to understand the high-field transport properties of these materials. Finally, we provide several examples of applications of the model to the calculation of the low-field electron mobility of GaN and In0.18Al0.82N, drift velocity in GaN and the impact ionization coefficients in AlxGa1-xN alloys.
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook
Bertazzi Francesco;Goano Michele
2013
Abstract
In this paper, we describe the state of the art in the numerical simulation of the carrier transport properties of GaN and its ternary alloys. We outline the characteristics of our state of the art full-band Monte Carlo model that includes a fitting parameter free approach to compute the carrier-phonon interaction and a full quantum mechanical model for multiband transport which is critical to understand the high-field transport properties of these materials. Finally, we provide several examples of applications of the model to the calculation of the low-field electron mobility of GaN and In0.18Al0.82N, drift velocity in GaN and the impact ionization coefficients in AlxGa1-xN alloys.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
