On the electrostatic actuation of capacitive RF MEMS switches on GaAs substrate

Abstract The electrostatic actuation behaviour of the gold bridge in capacitive radio frequency microelectromechanical system switches, fabricated on GaAs substrate, is investigated. An unconventional imaging technique, based on the out-of-focus reflection, was used to evaluate the topographic profile of the suspended bridge and its lowering as a function of the voltage. Important parameters for the switch actuation, such as the pull-down voltage and the air gap between the bridge and the actuator, are estimated. Capacitance-voltage curves allow to evaluate the capacitance associated to the bridge in the up and down states as well as the dielectric constant of the Si<inf>3</inf>N<inf>4</inf> layer, which covers the actuator. The experimental values of the pull-down voltage and the dielectric constant are used to extract from the theoretical equations the residual stress of the fabricated gold membrane. Finally, the current through the dielectric Si<inf>3</inf>N<inf>4</inf> layer was measured as a function of the voltage applied to the actuator, finding that the Poole-Frenkel effect is the dominant conduction mechanism when the switch is actuated.