We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600?m, furthermore laser annealing is demonstrated. © 2011 IEEE.
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications
Lulli G;
2011
Abstract
We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600?m, furthermore laser annealing is demonstrated. © 2011 IEEE.File in questo prodotto:
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