By comparing simulated and measured dark current-voltage (I-V) characteristics of CIGS cells at different temperatures, we investigate the temperature behavior of the shunt leakage current, and find that it can be explained by large donor trap concentrations at grain boundaries (GBs), and by a Schottky barrier at the backside contact where the GBs meets the anode metallization. We studied the I-V characteristics in the temperature range 280 K - 160 K achieving good fits of the measured I-V curves, especially for reverse bias and low forward bias, where the shunt leakage current dominates. The most important parameters determining the shunt leakage current value and its temperature dependence are the peak energy and density of the GB donor distribution, which control the inversion of GBs and the pinning of Fermi level at the anode/GB contact
On the temperature behavior of shunt-leakage currents in Cu(In,Ga)Se2 solar cells: the role of grain boundaries and rear Schottky contact
N Cavallari;M Bronzoni;F Annoni;M Calicchio;M Mazzer
2015
Abstract
By comparing simulated and measured dark current-voltage (I-V) characteristics of CIGS cells at different temperatures, we investigate the temperature behavior of the shunt leakage current, and find that it can be explained by large donor trap concentrations at grain boundaries (GBs), and by a Schottky barrier at the backside contact where the GBs meets the anode metallization. We studied the I-V characteristics in the temperature range 280 K - 160 K achieving good fits of the measured I-V curves, especially for reverse bias and low forward bias, where the shunt leakage current dominates. The most important parameters determining the shunt leakage current value and its temperature dependence are the peak energy and density of the GB donor distribution, which control the inversion of GBs and the pinning of Fermi level at the anode/GB contactI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
