We have measured the temperature dependence of resistivity in relatively thick Nb/Al bilayers fabricated at room temperature, observing the decrease of rho for increasing T typical of Anderson localization in disordered systems. We report the experimental conditions which determine this behavior and compare it to theoretical models for localization in 3D systems.
Anderson localization in Nb/Al superconducting bilayers
Maggi S;
2000
Abstract
We have measured the temperature dependence of resistivity in relatively thick Nb/Al bilayers fabricated at room temperature, observing the decrease of rho for increasing T typical of Anderson localization in disordered systems. We report the experimental conditions which determine this behavior and compare it to theoretical models for localization in 3D systems.File in questo prodotto:
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