We report here the first experimental evidence of semiconductor-superconductor transitions in relatively thick Nb/Al structures. The temperature dependence of resistance R(T) always shows a sharp superconducting transition followed by either a normal metallic R(T) behavior in low-resistivity samples, or a semiconductor-like behavior when the sample resistivity at 10 K is above 100 mu Omega cm. We discuss here the fabrication conditions and the electron localization regime associated with the measured R(T) dependence.

Semiconductor-superconductor transitions in Nb/Al structures

Maggi S;
1998

Abstract

We report here the first experimental evidence of semiconductor-superconductor transitions in relatively thick Nb/Al structures. The temperature dependence of resistance R(T) always shows a sharp superconducting transition followed by either a normal metallic R(T) behavior in low-resistivity samples, or a semiconductor-like behavior when the sample resistivity at 10 K is above 100 mu Omega cm. We discuss here the fabrication conditions and the electron localization regime associated with the measured R(T) dependence.
1998
0-7503-0597-5
bilayer
semiconductor-superconductor transition
localization
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/315359
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