We report here the first experimental evidence of semiconductor-superconductor transitions in relatively thick Nb/Al structures. The temperature dependence of resistance R(T) always shows a sharp superconducting transition followed by either a normal metallic R(T) behavior in low-resistivity samples, or a semiconductor-like behavior when the sample resistivity at 10 K is above 100 mu Omega cm. We discuss here the fabrication conditions and the electron localization regime associated with the measured R(T) dependence.

Semiconductor-superconductor transitions in Nb/Al structures

Maggi S;
1998

Abstract

We report here the first experimental evidence of semiconductor-superconductor transitions in relatively thick Nb/Al structures. The temperature dependence of resistance R(T) always shows a sharp superconducting transition followed by either a normal metallic R(T) behavior in low-resistivity samples, or a semiconductor-like behavior when the sample resistivity at 10 K is above 100 mu Omega cm. We discuss here the fabrication conditions and the electron localization regime associated with the measured R(T) dependence.
1998
Inglese
D. Dew-Hughes, R. G. Scurlock, and J. H. P. Watson
Proceedings of ICEC 17, Inter- national Cryogenic Engineering Conference
ICEC 17, International Cryogenic Engineering Conference
487
490
4
0-7503-0597-5
Sì, ma tipo non specificato
14-17 July 1998
Bournemouth, UK
bilayer
semiconductor-superconductor transition
localization
1
none
Greco, M; Lacquaniti, V; Maggi, S; Menichetti, E; Rinaudo, G
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/315359
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