Since their prediction, memristive devices revolutionized the world of computing and nowadays they have been widely considered as promising candidate for mimicking synapses. In particular, organic-based memristors allow the construction of circuits capable of learning. Physarum Polycephalum slime mold is well suited for the implementation of the functional properties of smart living systems into electronic devices. Physarum has memory patterns that can be associated to learning, generally considered a feature of more complex species. Here we presents the characteristics of an hybrid memristor developed by interfacingpoly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), (PEDOT: PSS), with Physarum Polycephalum (PP). The device has memristive features resulting by electrochemical changes occurring into the polymer upon application of anodic potentials across the semiconducting PEDOT: PSS channel.

Interfacing Physarum polycephalum with organic memristors

Dimonte Alice;Tarabella Giuseppe;D'Angelo Pasquale;Erokhin Victor;Iannotta Salvatore
2015

Abstract

Since their prediction, memristive devices revolutionized the world of computing and nowadays they have been widely considered as promising candidate for mimicking synapses. In particular, organic-based memristors allow the construction of circuits capable of learning. Physarum Polycephalum slime mold is well suited for the implementation of the functional properties of smart living systems into electronic devices. Physarum has memory patterns that can be associated to learning, generally considered a feature of more complex species. Here we presents the characteristics of an hybrid memristor developed by interfacingpoly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), (PEDOT: PSS), with Physarum Polycephalum (PP). The device has memristive features resulting by electrochemical changes occurring into the polymer upon application of anodic potentials across the semiconducting PEDOT: PSS channel.
2015
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
2015 INTERNATIONAL CONFERENCE ON MEMRISTIVE SYSTEMS (MEMRISYS)
MEMRISYS 2015
1
3
978-1-4673-9209-9
IEEE, 345 E 47TH ST, NY 10017
NEW YORK
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
8-10/11/2015
Paphos, Cyprus
Physarum polycephalum
living organism
memristors
synapses
learning
5
none
Dimonte, Alice; Romeo, Agostino; Tarabella, Giuseppe; D'Angelo, Pasquale; Erokhin, Victor; Iannotta, Salvatore
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
   Physarum Chip: Growing Computers from Slime Mould
   PHYCHIP
   FP7
   316366
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/319252
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 0
social impact