Sn02 nanorods were successfully deposited on 3" Si/Si02 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape Sn02 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and IS nm and a length of 160 to 300 nm. The Sn02-nanords based gas sensors were tested towards NH3 and CH30H and gas sensing tests show remarkable response, showing promising and repeatable results compared with the Sn02 thin films gas sensors.

Fabrication at wafer level of micromachined gas sensors based on Sno 2 nanorods deposited by PECVD and gas sensing characteristics

A Forleo;L Francioso;S Capone;F Casino;P Siciliano;
2011

Abstract

Sn02 nanorods were successfully deposited on 3" Si/Si02 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape Sn02 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and IS nm and a length of 160 to 300 nm. The Sn02-nanords based gas sensors were tested towards NH3 and CH30H and gas sensing tests show remarkable response, showing promising and repeatable results compared with the Sn02 thin films gas sensors.
2011
Istituto per la Microelettronica e Microsistemi - IMM
978-1-4577-0623-3
Average diameter; Gas sensing; Gas sensing characteristics; Growth conditions; High temperature; In-situ; Inductively-coupled; Micromachined gas sensor; Needle shape; Solid state gas sensors; Wafer level
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/320109
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