We investigate the thermal transport properties of a temperature-biased Josephson tunnel junction composed of two different superconductors. We show that this simple system can provide a large negative differential thermal conductance (NDTC) with a peak-to-valley ratio of ~3 in the transmitted electronic heat current. The NDTC is then exploited to outline the caloritronic analog of the tunnel diode, which can exhibit a modulation of the output temperature as large as 80 mK at a bath temperature of 50 mK. Moreover, this device may work in a regime of thermal hysteresis that can be used to store information as a thermal memory. On the other hand, the NDTC effect offers the opportunity to conceive two different designs of a thermal transistor, which might operate as a thermal switch or as an amplifier/modulator. The latter shows a heat amplification factor >1 in a 500-mK-wide working region of the gate temperature. After the successful realization of heat interferometers and thermal diodes, this kind of structures would complete the conversion of the most important electronic devices in their thermal counterparts, breaking ground for coherent caloritronics nanocircuits where heat currents can be manipulated at will.

Negative differential thermal conductance and heat amplification in superconducting hybrid devices

Bosisio R;Solinas P;Giazotto F
2016

Abstract

We investigate the thermal transport properties of a temperature-biased Josephson tunnel junction composed of two different superconductors. We show that this simple system can provide a large negative differential thermal conductance (NDTC) with a peak-to-valley ratio of ~3 in the transmitted electronic heat current. The NDTC is then exploited to outline the caloritronic analog of the tunnel diode, which can exhibit a modulation of the output temperature as large as 80 mK at a bath temperature of 50 mK. Moreover, this device may work in a regime of thermal hysteresis that can be used to store information as a thermal memory. On the other hand, the NDTC effect offers the opportunity to conceive two different designs of a thermal transistor, which might operate as a thermal switch or as an amplifier/modulator. The latter shows a heat amplification factor >1 in a 500-mK-wide working region of the gate temperature. After the successful realization of heat interferometers and thermal diodes, this kind of structures would complete the conversion of the most important electronic devices in their thermal counterparts, breaking ground for coherent caloritronics nanocircuits where heat currents can be manipulated at will.
2016
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Istituto Nanoscienze - NANO
TRANSPORT; JUNCTIONS; FLOW
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/320305
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